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| ( DataSheet : www..com ) 2SK3254 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications * Low ON-state resistance. * Low Qg. Absolute Maximum Ratings / Ta=25C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature * ):Chip Performance Shown unit VDSS VGSS ID* IDP PD Tch Tstg 500 30 10 40 50 150 --55 to 150 min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD ID=1mA , VGS=0 VDS=500V , VGS=0 VGS=30V , VDS=0 VDS=10V , ID=1mA VDS=10V , ID=5A ID=5A , VGS=10V VDS=20V VDS=20V VDS=20V VDS=200V VGS=10V , , , , f=1MHz f=1MHz f=1MHz ID=5A 500 250 100 3.5 6.3 0.8 880 140 48 30 17 35 100 38 1.5 1.0 V V A A W C C typ max unit V A nA V S pF pF pF nC ns ns ns ns V (TC=25C) Electrical Characteristics / Ta=25C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage 2.5 2.4 See Specified Test Circuit IS=5A , VGS = 0 (Note) Be careful in handling the2SK3254 because it has no protection diode between gate and source. Switching Time Test Circuit VDD=200V PW=1S D.C.0.5% ID=5A RL=40 D 4.0 Package Dimensions 3.4 16.0 5.0 8.0 TO-3PML(unit:mm) 5.6 3.1 2.8 2.0 20.4 G 2SK3254 P.G RGS 50 S 1.0 0.6 3.5 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications and information herin are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Business Headquarters www..com TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN www..com 990118TM2fXHD 2.0 2.0 VOUT 21.0 22.0 VGS=10V |
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